General Description
* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
* Low Profile - 1 mm max in Power 33

* DC - DC Conversion
* PSE Switch Top 8765 Bottom DDD D 1 234 GS S S MLP 3.3x3.3 D5 D6 D7 D8 4G 3S 2S 1S .

* Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicondu.

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